SiC and GaN technologies combine fast switching, low conduction losses and advanced packaging to support increasingly demanding datacenter power architectures. Strong high-temperature performance and effective paralleling help designers achieve the efficiency, power density and scalability required by next-generation power systems.

Optimized hot-swap MOSFET solutions combine strong paralleling capability, effective thermal performance and large safe operating area (SOA). These characteristics are particularly important for reliable hot-swap and power-distribution designs operating at the high currents increasingly encountered in AI and compute-intensive servers.

Helping designers reduce power losses while achieving efficient, clean and low-noise switching across a wide range of datacenter power applications, our Gen 2 Schottky diodes combine low forward voltage, low reverse recovery charge (Qrr) and low leakage current.

Beyond power conversion, our broad range of signal-path and discrete protection technologies helps enable reliable chip-to-chip communication, connectivity and interface protection across complex server and accelerator architectures. These technologies support system monitoring, control, voltage-domain interoperability and high-speed data interfaces throughout modern datacenter platforms.