双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PSMN1R2-80CSE

N-channel, 80 V, 1.18 mOhm, MOSFET with enhanced SOA in CCPAK1212i package

N-channel enhancement mode MOSFET in a CCPAK1212i package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R2-80CSE delivers very low RDSon and enhanced safe operating area performance in a high-reliability copper-clip package (CCPAK1212).

PSMN1R2-80CSE complements the latest "hot-swap" controllers - robust enough to withstand substantial inrush currents during turn-on, low RDSon to minimize I²R losses and deliver optimum efficiency when turned fully ON.

Features and benefits

  • Fully optimized Safe Opertating Area (SOA) for superior linear mode operation

  • Low RDSon for low I²R conduction losses

  • CCPAK1212i package for applications that demand the highest performance and reliability

  • Inverted package, suitable for top-side cooling

Applications

  • Hot swap

  • Load switch

  • Soft start

  • E-fuse

  • Telecommunication systems based on a 48 V backplane/supply rail

参数类型

型号 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PSMN1R2-80CSE SOT8005A CCPAK1212i Qualification N 1 80 1.18 175 375 27.3 233 935 76.5 2.8 N 18705 4363 2024-05-06

封装

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
PSMN1R2-80CSE PSMN1R2-80CSEJ
(934666615118)		 Samples available / Development XP1E2S80C SOT8005A
CCPAK1212i
(SOT8005A) 		SOT8005A 暂无信息

环境信息

型号 可订购的器件编号 化学成分 RoHS RHF指示符
PSMN1R2-80CSE PSMN1R2-80CSEJ PSMN1R2-80CSE rohs rhf
品质及可靠性免责声明

Series

文档 (11)

文件名称 标题 类型 日期
PSMN1R2-80CSE N-channel, 80 V, 1.18 mOhm, MOSFET with enhanced SOA in CCPAK1212i package Data sheet 2024-10-10
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN90001 Designing in MOSFETs for safe and reliable gate-drive operation Application note 2024-10-28
SOT8005A Plastic, surface mounted copper clip package (CCPAK1212i); 12 terminals;2.0 mm pitch, 12 mm × 12 mm × 2.5 mm body Package information 2024-10-23
T12_SOT8005A_PSMN1R2-80CSE_Nexperia_Quality_Reliability_document T12_SOT8005A_PSMN1R2-80CSE_Nexperia_Quality_Reliability_document Quality document 2024-11-01
PSMN1R2-80CSE PSMN1R2-80CSE RC thermal model Thermal model 2024-09-10
PSMN1R2-80CSE_Cauer PSMN1R2-80CSE Cauer model Thermal model 2024-09-10
PSMN1R2-80CSE_Foster PSMN1R2-80CSE Foster model Thermal model 2024-09-10

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
PSMN1R2-80CSE PSMN1R2-80CSE RC thermal model Thermal model 2024-09-10
PSMN1R2-80CSE_Cauer PSMN1R2-80CSE Cauer model Thermal model 2024-09-10
PSMN1R2-80CSE_Foster PSMN1R2-80CSE Foster model Thermal model 2024-09-10

订购、定价与供货

型号 Orderable part number Ordering code (12NC) 状态 包装 Packing Quantity 在线购买

样品

作为 Nexperia 的客户，您可以通过我们的销售机构订购样品。

如果您没有 Nexperia 的直接账户，我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买
PSMN1R2-80CSE PSMN1R2-80CSEJ 934666615118 SOT8005A 订单产品